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基片温度对Ni80Fe20薄膜结构和各向异性磁电阻的影响 孙文博1,陈欢1,沙文杰1,王合英1 (1.清华大学,物理系,北京,100084) 摘要:本文用磁控溅射方法制备出一系列Ni80Fe20磁性薄膜,研究不同基片温度对薄膜结构和各向异性磁电阻的影响.基片温度在150~180 ℃时制备的Ni80Fe20薄膜具有较大的各向异性磁电阻效应和较低的磁化饱和场.X射线衍射仪和扫描电子显微镜测量结果表明,基片温度通过改变薄膜的晶体结构,晶粒大小和均匀性等微观结构改变薄膜的零场电阻率和各向异性磁电阻,文章对实验结果做出了详细分析. 关键词:Ni80Fe20薄膜; 基片温度; 结构; 各向异性磁电......
La0.67Ca0.33Mn1-xTxO3低场下的大磁阻效应 赵文瑾1,秦宏伟1,胡季帆1 (1.山东大学物理系,) 摘要:研究了在低磁场H≤0.8T区间下的材料La0.67Ca0.33Mn1-xTxO3(T=Fe或Ni)中的磁阻效应,发现在La0.67Ca0.33Mn1-xFexO3中用铁替代锰降低了磁阻比,但改善了磁阻随磁场变化的线性度.用少量的镍替换锰(x=0.1)时,可得到较好的低场高磁阻变化特性. 关键词:大磁阻材料; 低磁场; [全文内容正在添加中] ......
Fe/In2O3/Fe多层膜的磁性及巨磁电阻效应 张汝贞1,王军华1,张林1,黄宝歆1 (1.山东大学,物理与微电子学院,山东济南,250100) 摘要:采用射频溅射方法成功制备了由过渡族元素Fe和半导体材料In2O3交替生长构成的Fe/In2O3/Fe多层膜.室温下,磁性测量结果表明样品具有超顺磁性,符合朗之万方程;磁电阻比的最大值为2.93%,遵从颗粒膜磁电阻的平方律.上述实验结果表明该多层膜样品具有类似于颗粒膜的结构. 关键词:Fe/In2O3/Fe多层膜; 超顺磁性; 磁电阻; [全文内容正在添加中] ......
钙钛矿型稀土锰氧化物La0.7Sr0.3FexMn1-xO3的磁性和巨磁电阻效应 马廷钧1,张健2,鲜于文旭3,李宝河1 (1.北京工商大学数理部,;2.中国科学院物理所,;3.吉林大学物理系,) 摘要:采用溶胶-凝胶工艺制备了La0.7Sr0.3FexMn1-xO3化合物,研究Fe掺杂对材料的导电性能,磁性能,磁电阻性能的影响.发现随Fe含量的增加,材料的电阻率提高,铁磁居里温度(TC)下降,巨磁电阻效应增强.观察到x=0.05和x=0.08的样品的电阻率随温度变化曲线出现双峰.对于x=0.08的样品,在室温附近磁电阻达到18% (8×105 A*m-1外场).对于x>0.08的样品,......
跃迁模型对高温的电阻特性进行拟合处理,得到了激活能;同时发现退火处理对样品的电阻率有重要的影响. 关键词:磁电阻; 输运特性; 稀土; 非绝热小极化子跃迁; magnetoresistance; transport property; rare earths; nonadiabatic small polaron hopping; [全文内容正在添加中] ......
on interface magnetic anisotropy,giant magnetoresistance and interlayer couplings,whichare of great promise for applications to high density magnetic storage.关键词:......
, the significant improvement on anisotropic magnetoresistance occurs at the annealing temperature higher than 550℃. But for films deposited at ambient temperatures and 240 ℃, the anisotropic magnetoresistance can only rise to about 1% after 650 ℃ annealing. For films deposited at 350℃ and 410℃, the anisotropic magnetoresistance rises to about 3.8% after 650℃ annealing. The atomic force microscopy (AFM......
, and magnetoresistance of the Ni80Fe20/Ni48Fe12Cr40 bilayer film was investigated. The thickness of the Ni48Fe12Cr40 layer varied from about 1 nm to 18 nm while the Ni80Fe20 layer thickness was fixed at 45 nm... of the Ni48Fe12Cr40 underlayer for improving the anisotropic magnetoresistance effect of the Ni80Fe20/Ni48Fe12Cr40 bilayer film is about 5 nm. With a decrease in temperature from 300 K to 81 K......
compounds order ferrimagnetically at 462 and 471 K,respectively.The Er1-xGdxMn6Ge6 compounds undergo the second transitions below 71 K.The magnetoresistance curves of the Er0.1Gd0.9Mn6Ge6 compound in a field of 5 T are presented and the magnetoresistance effects are related to the metamagnetic transitions.关键词:......
. The measured and calculated results show that the former has higher specular electron scattering (SES) parameter at MgO/NiFe interfaces, lower resistivity, and higher magnetoresistance (MR). The improved......