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The effect of multilayer structure on magnetic properties of FePt thin films Xiaomin CHENG1,Kaifeng DONG1,Xiaofei YANG1,Weiming CHENG1,Junbing YAN1 (1.Department of Electronic Science & Technology,Huazhong University of Science & Technology,Wuhan 430074,China) Abstract:The Fe/Pt multilayer films with different structures were deposited by RF magnetron sputtering on glass substrates......
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Microfabrication and Performance of Annealed NiTi Shape Memory Thin Films by Sputtering for Microdevice Applications GONG Feng-fei1 (1.Physics Dept., East China Normal University, Shanghai 200062, China) 摘要:The microfabrication and performance NiTi shape memory thin films for microdevice applications were studied by microfabrication processes, which were compatible with those......
Photoluminescence properties of ZnSe/SiO2 composite thin films prepared by sol-gel method JIANG Hai-qing(姜海青)1, 2, CHE Jun(车 俊)2, YAO Xi(姚 熹)2 1. School of Technical Physics, Xidian... Abstract: ZnSe/SiO2 composite thin films was prepared by sol-gel method. XRD results indicate the phase structure of ZnSe particles embedded in ZnSe/SiO2 composite thin films is sphalerite (cubic......
Preparation and characterization of microcrack-free thick YBa2Cu3O7-δ filmsXIONG Jie,QIN Wenfeng,TANG Jinlong,TAO Bowan,CUI Xumei,and LI Yanrong State Key Lab of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China摘 要:High quality epitaxial YBa2Cu3O7-δ (YBCO) superconducting films......
TiN和TiAlN涂层硬质合金的氧化和切削性能徐银超1,陈康华1,王社权1,2,祝昌军1,谢灿强1,陈响明21. 中南大学粉末冶金国家重点实验室2. 株洲钻石切削刀具股份有限公司摘 要:采用阴极弧蒸发涂层工艺在硬质合金基体上分别沉积TiN和TiAlN涂层.利用XRD,SEM和显微硬度计分析2种涂层硬质合金氧化前后的物相组成,组织形貌和显微硬度,并对2种涂层硬质合金刀片进行切削性能测试.研究结果表明:2种涂层硬质合金在不同温度氧化一定时间后出现边缘开裂,基体氧化物鼓出.TiAlN涂层硬质合金抗氧化性能优于TiN涂层硬质合金.2种涂层硬质合金的显微硬度随着氧化时间增加而减小.由于TiAlN涂层硬质合金具有良好的抗氧化性,所以随着切削速度提高,表现出更好的切削性能.关键词:TiN;TiAlN......
Influence of Lanthanum on Fluorescence Properties of Ag-BaO Thin Films 吴锦雷1,许北雪1 (1.Department of Electronics, Peking University, Beijing 100871, China) Abstract:Ag-BaO thin films doped with lanthanum were prepared by vacuum deposition. Compared with the normal Ag-BaO thin film, there is almost no change with the shape and the peak site of the fluorescence spectrum; however, fluorescence......
Ti-Si-N films prepared by magnetron sputteringPAN Li a, b , BAI Yizhen a , ZHANG Dong a , and WANG Jian a a Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry...="ChDivSummary">A film growth mechanism, expressed in terms of depositing hard films onto the soft substrate, was proposed. Multicomponent thin films of Ti-Si-N were deposited onto Al substrate with a double......
Dielectric thin films for GaN-based high-electron-mobility transistorsYan-Rong Li,Xing-Zhao Liu,Jun Zhu,Ji-Hua Zhang,Lin-Xuan Qian,Wan-Li ZhangState Key Laboratory of Electronic Thin Films... thin films on the performance of Ga N-based high-electron-mobility transistors(HEMTs) were reviewed in this work. Firstly, the nonpolar dielectric thin films which act as both the surface passivation......
Influence of Annealing on Microstructure and Photoluminescence Properties of Al-Doped ZnO Films Li Yan1,Cheng Hang1,Xie Juan1,Xu Ziqiang1,Deng Hong1 (1.School of Microelectronics and Solid-State...) properties of Al doped ZnO thin films deposited on Si (100) substrates by sol-gel method was investigated. An X-ray diffraction (XRD) was used to analyze the structural properties of the thin films. All......