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Boron removal from metallurgical silicon using CaO-SiO2-CaF2 slags CAI Jing1, LI Jin-tang1, CHEN Wen-hui1, CHEN Chao2, LUO Xue-tao1 1. Department of Materials Science and Engineering, College... 2010; accepted 29 December 2010 Abstract: The removal of boron from metallurgical silicon in slag system of CaO-SiO2-10%CaF2 was investigated. The partition coefficient of boron (LB) between slag......
Effect of carbide formers on microstructure and thermal conductivity of diamond-Cu composites for heat sink materials XIA Yang(夏 扬), SONG Yue-qing(宋月清), LIN Chen-guang(林晨光), CUI Shun(崔... metallurgy, in which the diamond particles were pre-coated by magnetic sputtering with copper alloy containing a small amount of carbide forming elements (including B, Cr, Ti, and Si). The influence......
EFFECTS OF MODIFICATION OF THE CARBIDE CHARACTERISTICS THROUGH GRAIN BOUNDARY SERRATION ON CREEP-FATIGUE LIFE IN AUSTENITIC STAINLESS STEELS S.W.Nam1,H.U.Hong2,K.J.Kim1,K.S.Min3 (1.Dept...., 449-771, Korea) Abstract:Modification of the carbide characteristics through the grain boundary serration is investigated, using an AISI 316 and 304 stainless steels. In both steels, triangular......
电感耦合等离子体原子发射光谱法测定碳化硅中杂质元素姚永生1(1.河南省安阳市河南省有色金属地质矿产局第一地质大队)摘 要:提出了使用电感耦合等离子体原子发射光谱同时测定碳化硅中微量Fe,Al,Ti,Ca,Mg,P,Mn的分析方法.样品用无水碳酸钠与硼酸混合熔剂熔融,硝酸提取,甲醇除硼,氢氟酸挥硅,然后在选定的仪器工作条件下测定.使用基体匹配法来校正基体的干扰.各元素的测定检出限为0.001~0.054μg/mL,相对标准偏差(RSD,n=9)为0.5%~3.7%.经比对试验证明,本法测定值与其他方法测定值相符合......
Microstructure and properties of electronic packaging shell with high silicon carbide aluminum-base composites by semi-solid thixoformingGUO Ming-hai(郭明海), LIU Jun-you(刘俊友), JIA Cheng-chang(贾成厂), JIA... silicon carbide aluminum-base composites was prepared by semi-solid thixoforming technique. The flow characteristic of the SiC particulate was analyzed. The microstructures of different parts of the shell......
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Low-Cost Preparation of Boron Nitride Ceramic Powders李端State Key Laboratory of Advanced Ceramic Fibers & Composites, College of Aerospace & Materials Engineering, National University of Defense Technology摘 要:The amorphous boron nitride ceramic powders were prepared at 750-950 ℃ by the low-cost urea route, and the effects of preparation temperatures......
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