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电子理论；价电子结构；结合能 中图分类号:O641.1 文献标志码:A Calculation of valence electron structures and cohesive energies of intermetallic compounds in Au-Cu system JIANG Shu-ying, LI Shi-chun (School of Electromechanical Engineering, China University of Petroleum (Huadong), Dongying 257061, China) Abstract: The valence electron structures and cohesive energies of Au-Cu system......
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固的后期阶段(形成Cu(Fe)相, 焊缝完全变为固态), 接头凝固的最终阶段(元素扩散及γ→α相变, 形成最终组织)联合作用的结果. 关键词: 铬青铜; 双相不锈钢; 电子束焊接; 组织形成 中图分类号: TG401 文献标识码: A Microstructures and formation of electron beam welding joint of QCr0.8... of Technology, Harbin 150001, China; 2. Xian Space Engine Factory, Xian 710061, China) Abstract: The electron beam welding was made on 2mm-thick Qcr0.8 and 1Cr21Ni5Ti. The microstructural......
region have been investigated. Resonantenhancements of Ce 4f valance band and Ce 5p bands for nano film and bulk materialhave been observed. The variation of electron density of states in valance bands ofnano and bulk structures of CeO2 is discussed in terms of Ce 4d-4f resonance. Key words:photoemission; resonant enhancement; valance band; electron density of state; [全文内容正在添加中] ......
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properties of TA15 titanium alloy weld-joints by embedded electron beam weld LI Jin-wei 1, 2, TANG Zhen-yun 2, GUO Guang-yao2, HU Wei 1, ZHANG Yi-liang 1 (1. College of Mechanical Engineering... Manufacturing Technology Research Institute, Beijing 100024, China) Abstract: The embedded electron beam welding is a process that inserts transition metals to accomplish the electron beam welding. It changes......
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(AFM), plan-view transmission electron microscopy (TEM) and energy-dispersive X-ray spectrometer (EDS). Dislocations are the origination of V defects. Stress field around dislocations induce... words:undoped GaN; Vanadium defect; dislocation; transmission electron microscopy; [全文内容正在添加中] ......
, where ?W is electron excitation energy in the range of 0.014 2-0.018 5 eV, and it has a trend of increasing when the temperature is increased. After synthetical analysis we get the conclusion... and it has the same trend as electron excitation energy when annealing temperature is increased, which further confirms the electronic mechanism of thin-films and the trend of electron excitation energy......
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