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In-Situ Wet Chemical Composition of Multicomponent Precursors to Blue Emitting Sr2CeO4 Phosphors Xiao Xiuzhen1,Yan Bing1 (1.Department of Chemistry, Tongji University, Shanghai 200092, China) Abstract:Hybrid precursors were assembled with cerium coordination polymers, polyethyl glycohol (PEG), SrCO3 and other functional components using a modified in-situ chemical polymeric gel technology......
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on the tungsten carbide substrates at different substrate temperatures ranging from 450 to 850 °C by hot filament chemical vapor deposition (HFCVD) method. The effect of deposition temperature on the properties... accelerated the rate of deposition chemical reaction. Moreover, Raman and XRD analysis showed that heavy boron doping (750 and 850 °C) deteriorated the diamond crystallinity and produced a high defect......
Preparation of ultrafine nickel powder by wet chemical process CHEN Rui-ying(陈瑞英), ZHOU Kang-gen(周康根) School of Metallurgical Science and Engineering, Central South University, Changsha 410083... with narrow size distribution. Key words: ultrafine nickel powder; chemical reduction; tap density; multiplayer ceramic capacitor 1 Introduction Driven towards smaller size, higher capacitance and lower......
KOH热湿腐蚀法准确估算GaN的位错密度 张进城1,高志远1,郝跃1,倪金玉1,张金凤1 (1.宽禁带半导体材料与器件教育部重点实验室,微电子学院,西安电子科技大学,西安,710071) 摘要:实验目的在于解决GaN外延层中六方形腐蚀坑起源问题存在的分歧,并利用腐蚀法准确地估计GaN的位错密度.大量对熔融KOH腐蚀GaN过程中表面形貌的演化以及温度和时间对腐蚀结果影响的实验结果表明,位错类型与腐蚀坑三维形状相对应,而与腐蚀坑大小无关,极性是GaN不同种类位错的腐蚀坑具有不同形状的决定性因素.使所有缺陷都显示出来所需的腐蚀温度和时间呈反比关系.腐蚀法估算GaN位错密度的准确性取决于优化的腐蚀条件和合理的微观观测方法. 关键词:位错密度; GaN; 腐蚀坑密度; 腐蚀机制; dislocation density; GaN; EPD; etching mechanism; [全文......
Effect of Cerium on Chemical Short-Range Order of Al-Fe-Ce Amorphous Alloy WU You-shi1,ZHANG Lin1,WANG Wei-min1,BIAN Xiu-fang1,LI Hui1,XING Zhi-na1 (1.College of Materials Science and Engineering, Shandong University of Technology, Jinan 250061, China) Abstract:The chemical short-range order of Al-Fe-Ce amorphous alloy was studied by means of X-ray diffraction(XRD) and differential scanning......
of formaldehyde on the electrochemistry and chemical etching of silicon in alkaline solutions [J]. Acta Chimical Sinica, 2004, 62(15): 1415-1418. (in Chinese) [11] HE Han-wei, HU Yue-hua, HUANG Ke-long... CeO2 were studied by polarization curve technologies. The dependence of the polishing rate on the pH and the concentration of CeO2 in slurries during chemical mechanical polishing(CMP) were also......
layers of the carbon/carbon (C/C) composites at 650-750 ℃ by the electromagnetic-field-assisted chemical vapor deposition in the absence of catalysts. The fine microstructures of the HPCs were... of polarization induction on electromagnetic fields and particle-filler property under disruptive discharge. Key words: headstand pyrocarbon cones; chemical vapor deposition; electromagnetic-field-assisted......
J. Cent. South Univ. Technol. (2008) 15(s1): 197-201 DOI: 10.1007/s11771-008-345-8 Fabrication of micro carbon pillar by laser-induced chemical vapor deposition ZHOU Jian(周 健)1, LUO Yin-she(罗迎社... power from 0.5 W to 4.5 W and the pressure of the precursor gas from 225×133.3 Pa to 680×133.3 Pa, the experiments of laser induced chemical vapor deposition were proceeded for fabrication of micro......
Chemical conversion coating on AZ31B magnesium alloy and its corrosion tendency Hualan JIN1,Ming WANG2,Xiangjie YANG2 (1.School of Materials Science and Engineering,Nanchang University,Nanchang... as well as the phase composition of chemical conversion coating formed by phosphate were studied using scanning electron microscope and X-ray diffraction. The corrosion resistance of the coating......
