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有机磁电阻效应研究进展 王良民1,张兆刚1,余天1,吕铃1,陈鹏1,李定国1,高春红1,李杏清1,郝身芬1 (1.西南大学物理科学与技术学院,重庆,400715) 摘要:介绍了近年国际上在π共轭有机半导体中新发现的有机磁电阻效应(Organic magnetoresistance,O-MAR)实验和理论的研究进展,展望了有机磁电阻效应的应用和研究.有机磁电阻效应不仅具有各向同性,常温下大磁电阻率和高磁场灵敏度的特点,而且不同于传统的磁电阻效应和目前广泛研究的巨磁电阻效应(Giant magnetore-sistance,GMR),其结构中不包含磁性材料也没有外部极化自旋的注入,是有机半导体的一种内禀性质. 关键词:π共轭有机半导体; 磁电阻效应; 有机磁电阻效应; [全文内容正在添加中] ......
resistivity, decreases the semiconductor–metal transition temperature(Tms) and relatively enhances the room temperature magnetoresistance(MR), especially in x = 0.025 and around Tms. With respect......
the spinning electron transport and the magnetoresistance effect.关键词:......
Structure and Transport Properties of La0.67Ca0.33Mn1-xAlxO3 张金仓1,韩雁冰2,葛洪良2,崔玉建2,贾广强1,王新燕1 (1.Department of Physics,Shanghai University,Shanghai 200436,China;2.Department of Applied Physics,China Institute of Metrology,Hangzhou 310018,China) Abstract:The effects of Al ion doping on the Mn site were studied for the colossal magnetoresistance material La0.67Ca0.33MnO3. It is found......
-LCMO system, a metal-insulator transition is observed at about -267K. The maximum of the magnetoresistance value is about 220% at TMI when x is 0.04. For V-LYMCO system, TMI is observed at about 50K, a very larger magnetoresistance up to about 106% is observed at 40-50K. It is suggested that it may be related to the partial substitution of La3+ cation with smaller Y3+, which may destroy the double......
temperature (TIM) and room temperature magnetoresistance decreased as the aluminum concentration increased. In the T>TIM region, the current carriers were moving in variable range transition mode......
of Sm, Gd, and Dy for La on the magnetic and electric properties and on the magnetoresistance (MR) was studied through measurements of M-T curves and ρ-T curves. The results showed that: lattice......
techniques, the sample synthesized by co-precipitation method exhibited the highest magnetoresistance (~63%).关键词:......
and magnetocaloric effect (MCE) studies of newly synthesized Gd10Co20Si70 alloy. These measurements confirm an antiferromagnetic transition at TN=9 K. Both MCE and magnetoresistance (MR) show quadratic......
paramagnetic-ferromagnetic transition and a considerable magnetoresistance effect were observed at the ferromagnetic ordering temperature TC,but no insulator-metal transition induced by Cu-doping......