Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack
来源期刊：JOURNAL OF RARE EARTHS2013年第4期
论文作者：杨萌萌 屠海令 杜军 魏峰 熊玉华 赵鸿斌
文章页码：395 - 399
摘 要：Effects of NH3 rapid thermal annealing（RTA） on the interface and electrical properties of Gd-doped HfO2（GDH）/Si stack were investigated.The process of NH3 annealing could significantly affect the crystallization,stoichiometric properties of GDH film and the interface characteristic of GDH/Si system.NH3 annealing also led to the decrease of interface layer thickness.The leakage current density of Pt/GDH/p-Si MOS capacitor without RTA was 2×10-3 A/cm2.After NH3 annealing,the leakage current density was about one order of magnitude lower（3.9×10-4A/cm2）.The effective permittivity extracted from the C-V curves was～14.1 and ～13.1 for samples without and with RTA,respectively.
杨萌萌1，屠海令1,2，杜军1，魏峰1，熊玉华1，赵鸿斌1
1. Advanced Electronic Materials Institute,General Research Institute for Nonferrous Metals2. National Engineering Research Center for Semiconductor Materials,General Research Institute for Nonferrous Metals
摘 要：Effects of NH3 rapid thermal annealing（RTA） on the interface and electrical properties of Gd-doped HfO2（GDH）/Si stack were investigated.The process of NH3 annealing could significantly affect the crystallization,stoichiometric properties of GDH film and the interface characteristic of GDH/Si system.NH3 annealing also led to the decrease of interface layer thickness.The leakage current density of Pt/GDH/p-Si MOS capacitor without RTA was 2×10-3 A/cm2.After NH3 annealing,the leakage current density was about one order of magnitude lower（3.9×10-4A/cm2）.The effective permittivity extracted from the C-V curves was～14.1 and ～13.1 for samples without and with RTA,respectively.
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