SURFACE MORPHOLOGY OF SELF-ASSEMBLED VERTICALLY STACKED InAs QUANTUM DOTS BY SIZE-CONTROLLED GROWTH
来源期刊：Acta Metallurgica Sinica2005年第3期
论文作者：S.W. Li K.Koike
Key words：quantum dot; molecular beam epitaxy; atomic force microscopy; photoluminescence;
Abstract: Structural and optical properties of vertically aligned InAs quantum dots (QDs) were embedded in Al0.5Ga0.5As spacer layers. The aligned QDs were grown at 520℃ in the Stranski-Krastanow (S-K) growth mode of molecular beam epitaxy. To improve QD characteristics, we employed a size- and density-controlled growth procedure in the upper layers. Measurements by reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) showed that both the size and density of the QDs. The temperature dependence of the wavelength-integrated photoluminescence (PL) intensity revealed the lnAs QD emission.
S.W. Li1，K.Koike2
(1.State Key Laboratory of Optoelectronic Materials and Technologies, Zhongshan (Sun Yat-sen;
2.New Materials Research Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535-8585,Japan)
Abstract:Structural and optical properties of vertically aligned InAs quantum dots (QDs) were embedded in Al0.5Ga0.5As spacer layers. The aligned QDs were grown at 520℃ in the Stranski-Krastanow (S-K) growth mode of molecular beam epitaxy. To improve QD characteristics, we employed a size- and density-controlled growth procedure in the upper layers. Measurements by reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) showed that both the size and density of the QDs. The temperature dependence of the wavelength-integrated photoluminescence (PL) intensity revealed the lnAs QD emission.
Key words:quantum dot; molecular beam epitaxy; atomic force microscopy; photoluminescence;
【全文内容正在添加中】
