简介概要

Magnetic and Transport Properties of Mn0.98Cr0.02Te Epitaxial Films Grown on Al2O3 Substrates

来源期刊:JOURNAL OF MATERIALS SCIENCE TECHNOLOG2014年第2期

论文作者:Z.H.Wang D.Y.Geng J.Li Y.B.Li Z.D.Zhang

文章页码:103 - 106

摘    要:The epitaxial Mn0.98Cr0.02Te films on single crystal Al2O3(0001) substrates were prepared by pulsed laser deposition.The X-ray diffraction and scanning electron microscopy results showed that the good continuous epitaxial film was obtained with substrate temperature of 500 ℃.When the substrate temperature reached700 ℃,the film was island growth and the manganese oxides phase appeared.The temperature dependence of both the magnetization and electrical resistance showed a sharp rise at around 60 K due to the magnetoelastic coupling.The temperature dependence of the electrical resistance of Mn0.98Cr0.02Te provided evidence for a transition from the metallic to semiconducting state at 305 K due to the spin disorder scattering with a large contribution from the influence of magnon drag.

详情信息展示

Magnetic and Transport Properties of Mn0.98Cr0.02Te Epitaxial Films Grown on Al2O3 Substrates

Z.H.Wang1,D.Y.Geng1,J.Li1,Y.B.Li2,Z.D.Zhang1

1. Shenyang National Laboratory for Materials Science,Institute of Metal Research,and International Centre for Materials Physics,Chinese Academy of Sciences2. Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences

摘 要:The epitaxial Mn0.98Cr0.02Te films on single crystal Al2O3(0001) substrates were prepared by pulsed laser deposition.The X-ray diffraction and scanning electron microscopy results showed that the good continuous epitaxial film was obtained with substrate temperature of 500 ℃.When the substrate temperature reached700 ℃,the film was island growth and the manganese oxides phase appeared.The temperature dependence of both the magnetization and electrical resistance showed a sharp rise at around 60 K due to the magnetoelastic coupling.The temperature dependence of the electrical resistance of Mn0.98Cr0.02Te provided evidence for a transition from the metallic to semiconducting state at 305 K due to the spin disorder scattering with a large contribution from the influence of magnon drag.

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