Electron irradiation effects on DC electrical performances of SiGe HBT in a comparison with Si BJT
来源期刊：Rare Metals2004年第4期
论文作者：TSIEN Peihsin
文章页码：330 - 339
摘 要：<正>The DC characteristics of SiGe HBT irradiated at different electron dose have been studied in a comparison with those of Si BJT. Generally, Ib and Ib - Ib0 increase, Ic, Ic - Ic0 and its +/- transition Vbe as well as DC current gain β decreases with increasing dose; increase of I - Ib0 with increasing dose for Si BJT is much larger than that for SiGe HBT; β increases with Vbe or Ib, but decreases at Ib < 0.25 mA with 4, and congregates at higher dose; and a damage factor d（β） is much less at the same dose for SiGe HBT than for Si BJT. SiGe HBT has much better anti-radiation performance than Si BJT. Some anomalous phenomena for increase of Ic, Ic -Ic0,Ib- Ib0 and β at low dose have been found. Some electron traps have been measured. The mechanism of changes of characteristics is discussed.
TSIEN Peihsin
摘 要：<正>The DC characteristics of SiGe HBT irradiated at different electron dose have been studied in a comparison with those of Si BJT. Generally, Ib and Ib - Ib0 increase, Ic, Ic - Ic0 and its +/- transition Vbe as well as DC current gain β decreases with increasing dose; increase of I - Ib0 with increasing dose for Si BJT is much larger than that for SiGe HBT; β increases with Vbe or Ib, but decreases at Ib < 0.25 mA with 4, and congregates at higher dose; and a damage factor d（β） is much less at the same dose for SiGe HBT than for Si BJT. SiGe HBT has much better anti-radiation performance than Si BJT. Some anomalous phenomena for increase of Ic, Ic -Ic0,Ib- Ib0 and β at low dose have been found. Some electron traps have been measured. The mechanism of changes of characteristics is discussed.
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