Effect of Oxygen and Hydrogen on Electron Irradiated Defects of Si Single Crystal
来源期刊：Rare Metals1989年第1期
论文作者：Gao Yuzun General Research Institute for Non-ferrous Metats,Beijing Takahashi H.,Sato Y.,Takeyama T.,and Nagasaki R.Metals Research Institute,Faculty of Engineering,Hokkaido University,Sapporo ,Japan
文章页码：28 - 31
摘 要：<正> Effect of oxygen and hydrogen on electron irradiated defects of Si single crystal has been studied.These CZ-Si andFZ-Si single crystal specimens were irradiated by electron beam with energy of～IMV in HVEM at temperature be-tween 298K and 773K.It was found that irradiated defects were easier to be produced in Si single crystal containing ox-ygen than in Si containing hydrogen.The irradiated defects had the larger density and shorter incubation time in Si con-taining oxygen.The bar-like defects,stacking faults and loops were along〈110〉direction.Bar-like defects and stack-ing faults had the Burgers vector〈116〉type and the stacking faults were on the（113） plane.The unfault process pro.duced interstitial loops with Burgers vectora/2〈110〉.
Gao Yuzun General Research Institute for Non-ferrous Metats,Beijing Takahashi H.,Sato Y.,Takeyama T.,and Nagasaki R.Metals Research Institute,Faculty of Engineering,Hokkaido University,Sapporo 060,Japan
摘 要：<正> Effect of oxygen and hydrogen on electron irradiated defects of Si single crystal has been studied.These CZ-Si andFZ-Si single crystal specimens were irradiated by electron beam with energy of～IMV in HVEM at temperature be-tween 298K and 773K.It was found that irradiated defects were easier to be produced in Si single crystal containing ox-ygen than in Si containing hydrogen.The irradiated defects had the larger density and shorter incubation time in Si con-taining oxygen.The bar-like defects,stacking faults and loops were along〈110〉direction.Bar-like defects and stack-ing faults had the Burgers vector〈116〉type and the stacking faults were on the（113） plane.The unfault process pro.duced interstitial loops with Burgers vectora/2〈110〉.
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