硅片抗弯强度测试方法中小挠度问题研究

来源期刊：中南大学学报(自然科学版)1996年第2期

论文作者：谢书银 石志仪

文章页码：231 - 233

关键词：硅; 抗弯强度; 小挠度

Key words：silicon; flexcure strength; little deflection

摘    要：推导了圆片冲击法测试硅片抗弯强度时最大挠度的计算公式.通过薄硅片抗弯强度的测试实验,对因不符合小找度假设产生的误差进行了实验校准,并研究了挠度、厚度比ω/δ与校准系数K的关系.结果表明,符合小挠度假设的范围是ω/δ≤1/7.

Abstract: The analytic expression was derived for maximum deflection in measurement of flexure strength for silicon wafer by wafer impact method. The deviation originated from diverging from little deflection was corrected by experiment and the relationship between the ratio of deflection to thichness of wafer and the correct factor K was also investigated.The result showed that the range in agreement with little deflection would be about ω/δ≤1/7.