Determination of the Deep Levels of Transition Metals in n-Type Silicon by Using DLTS Method
来源期刊:Rare Metals1989年第3期
论文作者:Sun Yicai Wang Zhijin Hebei Technical InstituteDang Jiping Hebei Semiconductor Institute
文章页码:61 - 62
摘 要:<正> 1.IntroductionSince the correspondence between theimpurity and its energy levels within the bandsis not exactly known enough,it is difficult toassign the impurity according to its levels.Inthis work,several metallic impurities were in-tentionally doped into samples,then their en-
摘要:<正> 1.IntroductionSince the correspondence between theimpurity and its energy levels within the bandsis not exactly known enough,it is difficult toassign the impurity according to its levels.Inthis work,several metallic impurities were in-tentionally doped into samples,then their en-
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