Interstitial Oxygen Determination in Heavily Doped Silicon with "Peak-height" Method by FT-IR Spectra
来源期刊：Rare Metals1993年第1期
论文作者：何秀坤 王琴 李光平
文章页码：39 - 42
摘 要：<正> Due to ineffectiveness of routine IR-absorption method for determinahon of intershtial oxygen in heavilydoped silicon, a "peak-height’ method has been dcveloped. The phosphorus-doped CZ-Si with n=（7.l～l2）×1017cm-3 was taken as sample for characterization. The calculation results at 300 K and 10 K were ptesentedin detail. The"peak-height" method is much simpler than "short-baseline" and "curved-baseline" methods.
何秀坤，王琴，李光平
摘 要：<正> Due to ineffectiveness of routine IR-absorption method for determinahon of intershtial oxygen in heavilydoped silicon, a "peak-height’ method has been dcveloped. The phosphorus-doped CZ-Si with n=（7.l～l2）×1017cm-3 was taken as sample for characterization. The calculation results at 300 K and 10 K were ptesentedin detail. The"peak-height" method is much simpler than "short-baseline" and "curved-baseline" methods.
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