Structure and electrical properties of PZT/LNO/PT multilayer films on stainless steel substrates
来源期刊：Rare Metals2012年第3期
论文作者：ZHAO Xuelian, JIANG Dan, YU Shengwen, and CHENG Jinrong School of Materials Science and Engineering, Shanghai University, Shanghai , China
文章页码：272 - 275
摘 要：PbZr0.53Ti0.47O3 （PZT） ferroelectric thin films were deposited on LaNiO3 （LNO） by sol-gel method. The PbTiO3 （PT） seed layer was depos-ited between the LNO buffer layer and stainless steel （SS） substrate, which effectively decreased the annealing temperature of LNO layer from 750 C to 650 C. X-ray diffraction （XRD） reveals that LNO layers with PT layer crystallize into a perovskite phase on annealing at 650 C for 10 min. PZT deposited on LNO buffer layer with PT seed layer exhibits good ferroelectric property.
摘要：PbZr0.53Ti0.47O3 （PZT） ferroelectric thin films were deposited on LaNiO3 （LNO） by sol-gel method. The PbTiO3 （PT） seed layer was depos-ited between the LNO buffer layer and stainless steel （SS） substrate, which effectively decreased the annealing temperature of LNO layer from 750 C to 650 C. X-ray diffraction （XRD） reveals that LNO layers with PT layer crystallize into a perovskite phase on annealing at 650 C for 10 min. PZT deposited on LNO buffer layer with PT seed layer exhibits good ferroelectric property.
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