Properties of Ultra-Thin Hafnium Oxide and Interfacial Layer Deposited by Atomic Layer Deposition
来源期刊：JOURNAL OF RARE EARTHS2004年增刊第2期
论文作者：Young-Bae Kim Taeho Lee Jinho Ahn Duck-Kyun Choi Kyung-Il Hong
Key words：atomic layer deposition; high-k dielectric; HfO2; interface; thermal stability;
Abstract: Ultra-thin hafnium-oxide gate dielectric films deposited by atomic layer deposition technique using HfCl4 and H2O precursor on a hydrogen-terminated Si substrate were investigated. X-ray photoelectron spectroscopy indicates that the interface layer is Hf-silicate rather than phase separated Hf-silicide and silicon oxide structure. The Hf-silicate interfacial layer partially changes into SiOx after high temperature annealing, resulting in a complex HfO2-silicate-SiOx dielectric structure. Electrical measurements confirms that HfO2 on Si is stable up to 700 ℃ for 30 s under N2 ambient.
Young-Bae Kim1，Taeho Lee2，Jinho Ahn2，Duck-Kyun Choi1，Kyung-Il Hong1
(1.Department of Ceramic Engineering,Hanyang University,17 Haengdang-dong,Seongdong-gu,Seoul 133-791,Korea;
2.Department of Material Science & Engineering,Hanyang University,17 Haengdang-dong,Seongdong-gu,Seoul 133-791,Korea)
Abstract:Ultra-thin hafnium-oxide gate dielectric films deposited by atomic layer deposition technique using HfCl4 and H2O precursor on a hydrogen-terminated Si substrate were investigated. X-ray photoelectron spectroscopy indicates that the interface layer is Hf-silicate rather than phase separated Hf-silicide and silicon oxide structure. The Hf-silicate interfacial layer partially changes into SiOx after high temperature annealing, resulting in a complex HfO2-silicate-SiOx dielectric structure. Electrical measurements confirms that HfO2 on Si is stable up to 700 ℃ for 30 s under N2 ambient.
Key words:atomic layer deposition; high-k dielectric; HfO2; interface; thermal stability;
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