Residual stress analysis on silicon wafer surface layers induced by ultraprecision grinding
来源期刊：Rare Metals2011年第3期
论文作者：ZHANG Yinxiaa, WANG Donga, GAO Weia, and KANG Renkeb a School of Mechanical Engineering, Zhengzhou University, Zhengzhou , China b Key Laboratory for Precision and Non-traditional Machining Technology of the Ministry of Education, Dalian University of Technology, Dalian , China
文章页码：278 - 281
摘 要：Grinding residual stresses of silicon wafers affect the performance of IC circuits. Based on the wafer rotation ultra-precision grinding ma-chine, the residual stress distribution along grinding marks and ground surface layer depth of the ground wafers are investigated using Raman microspectroscopy. The results show that the ground wafer surfaces mainly present compressive stress. The vicinity of pile-ups between two grinding marks presents higher a compressive stress. The stress value of the rough ground wafer is the least because the material is removed by the brittle fracture mode. The stress of the semi-fine ground wafer is the largest because the wafer surface presents stronger phase trans-formations and elastic-plastic deformation. The stress of the fine ground wafer is between the above two. The strained layer depths for the rough, semi-fine, and fine ground wafers are about 7.6 m, 2.6 m, and 1.1 m, respectively. The main reasons for generation of residual stresses are phase transformations and elastic-plastic deformation.
ZHANG Yinxiaa, WANG Donga, GAO Weia, and KANG Renkeb a School of Mechanical Engineering, Zhengzhou University, Zhengzhou 450001, China b Key Laboratory for Precision and Non-traditional Machining Technology of the Ministry of Education, Dalian University of Technology, Dalian 116024, China
摘 要：Grinding residual stresses of silicon wafers affect the performance of IC circuits. Based on the wafer rotation ultra-precision grinding ma-chine, the residual stress distribution along grinding marks and ground surface layer depth of the ground wafers are investigated using Raman microspectroscopy. The results show that the ground wafer surfaces mainly present compressive stress. The vicinity of pile-ups between two grinding marks presents higher a compressive stress. The stress value of the rough ground wafer is the least because the material is removed by the brittle fracture mode. The stress of the semi-fine ground wafer is the largest because the wafer surface presents stronger phase trans-formations and elastic-plastic deformation. The stress of the fine ground wafer is between the above two. The strained layer depths for the rough, semi-fine, and fine ground wafers are about 7.6 m, 2.6 m, and 1.1 m, respectively. The main reasons for generation of residual stresses are phase transformations and elastic-plastic deformation.
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