MOCVD Growth of Doped GaAs/AlGaAs Quantum Heterostructures
来源期刊：Rare Metals1993年第1期
论文作者：任红文 徐现刚 黄柏标 刘士文 蒋民华
文章页码：25 - 29
摘 要：<正> The influences of growth techniques of AP-MOCVD GaAs/AlGaAs silicon-doped multi-quantum wells（MQWs）, heterostructure bipolar transistors （HBTs）, double barrier resonant tunneling diodes（DBRTDs） ontheir structures and performances were studied. Continuously grown MQWs, that is, no growth interruption atthe heterointerfaces, shown blue-shifted, narrower and stronger photoluminescence（PL） compared withinterruptedly grown ones.TEM examination of the interrupted interfaces revealed a bright line correspondingto the compositional fluctuation and impurity adsorption, and indicated noncommutative structures ofAlGaAs/GaAs and GaAs/AlGaAs interfaces. High performance HBTs and DBRTDs were obtained bycontinuously grown method while growth interruption caused performance degradation. It was concluded thatgrowth interruption may cause accumulation of residua1 impurities in the ambient as well as compositionalfluctuation while continuous growth at very low growth rates can overcome such problems.
任红文，徐现刚，黄柏标，刘士文，蒋民华
摘 要：<正> The influences of growth techniques of AP-MOCVD GaAs/AlGaAs silicon-doped multi-quantum wells（MQWs）, heterostructure bipolar transistors （HBTs）, double barrier resonant tunneling diodes（DBRTDs） ontheir structures and performances were studied. Continuously grown MQWs, that is, no growth interruption atthe heterointerfaces, shown blue-shifted, narrower and stronger photoluminescence（PL） compared withinterruptedly grown ones.TEM examination of the interrupted interfaces revealed a bright line correspondingto the compositional fluctuation and impurity adsorption, and indicated noncommutative structures ofAlGaAs/GaAs and GaAs/AlGaAs interfaces. High performance HBTs and DBRTDs were obtained bycontinuously grown method while growth interruption caused performance degradation. It was concluded thatgrowth interruption may cause accumulation of residua1 impurities in the ambient as well as compositionalfluctuation while continuous growth at very low growth rates can overcome such problems.
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