氮气氛直拉硅中氧沉淀的研究

来源期刊：中南大学学报(自然科学版)1993年第2期

论文作者：佘思明 廖平婴 彭世宽 李立本

文章页码：267 - 272

关键词：直拉硅; 氧沉淀; 缺陷

Key words：CZSi; oxygen precipitation; defect

摘    要：用傅里叶红外光谱、透射电镜和化学腐蚀研究了氮气氛直拉硅(NCZSi)中的氧沉淀。结果指出,原生NCZSi中存在氧对-硅-氧复合物;N集中于氧沉淀的中心区域;N参子的中心区域表现出热稳定性。文中还提出了关于NCZSi中氧沉淀形核和生长途径的假设。

Abstract: The oxygen precipitation in NCZSi has been investigated in this paper by means ofFTIR,TEMand WE etc.The experimental results indicate that there are Np-Si-O complexesin as-grown NCZSi and that the N atoms gather around the centers of oxygen precipitates.These N-participates centers show thermal stability.Hypotheses concerning the nucleationand growth of oxygen precipitates in NCZSi are also suggested in this paper.