Growth and Magnetic Properties of Sol-Gel Derived Co-Doped ZnO Thin Film
来源期刊：JOURNAL OF RARE EARTHS2006年增刊第1期
论文作者：Tae Seok Park Ki Chul Kim Young Sung Kim Su Jeong Suh Won Pil Tae Dae Ho Yoon
Key words：sol-gel; Zn1-xCoxO thin film; dilute magnetic semiconductor (DMS);
Abstract: Zn1-xCoxO films were grown on glass by sol-gel spin coating process. A homogeneous and stable Zn1-xCoxO sol was prepared by dissolving zinc acetate dihydrate, cobalt acetate tetrahydrate and aluminium chloride hexahydrate as solutes in solution of isopropanol and monoethanolamine. The films were postheated and vacuum annealed, and investigated for c-axis preferred orientation and electromagnetic properties. Zn1-xCoxO films with different Co concentrations were oriented well along the c-axis, especially the Zn1-xCoxO film with 10% Co(atom fraction) was highly c-axis oriented. The transmittance spectra show that Zn1-xCoxO films occur d-d transition and sp-d exchange interaction between Co2+ ions. The electrical resistivity of the films at 10% Co had the lowest value because the crystallite size became largest and the crystallinity of the c-axis was improved. X-ray photoelectron spectroscopy and alternating gradient magnetometer analyses indicated that no Co metal cluster was formed, and the ferromagnetism at room temperature appeared. The characteristics of the electrical resistivity and room temperature ferromagnetism of sol-gel derived Zn1-xCoxO films suggest a potential application of dilute magnetic semiconductor devices.
Tae Seok Park1，Ki Chul Kim2，Young Sung Kim1，Su Jeong Suh1，Won Pil Tae3，Dae Ho Yoon1
(1.Advanced Material Process of Information Technology, Sungkyunkwan University, Suwon 440-746, Korea;
2.Cambridge-ETRI Joint R&D Centre, Electronics and Telecommunications Research Institute, Daejeon 305-350, Korea;
3.Ulsan Industry Promotion Techno Park, Ulsan 683-804, Korea)
Abstract:Zn1-xCoxO films were grown on glass by sol-gel spin coating process. A homogeneous and stable Zn1-xCoxO sol was prepared by dissolving zinc acetate dihydrate, cobalt acetate tetrahydrate and aluminium chloride hexahydrate as solutes in solution of isopropanol and monoethanolamine. The films were postheated and vacuum annealed, and investigated for c-axis preferred orientation and electromagnetic properties. Zn1-xCoxO films with different Co concentrations were oriented well along the c-axis, especially the Zn1-xCoxO film with 10% Co(atom fraction) was highly c-axis oriented. The transmittance spectra show that Zn1-xCoxO films occur d-d transition and sp-d exchange interaction between Co2+ ions. The electrical resistivity of the films at 10% Co had the lowest value because the crystallite size became largest and the crystallinity of the c-axis was improved. X-ray photoelectron spectroscopy and alternating gradient magnetometer analyses indicated that no Co metal cluster was formed, and the ferromagnetism at room temperature appeared. The characteristics of the electrical resistivity and room temperature ferromagnetism of sol-gel derived Zn1-xCoxO films suggest a potential application of dilute magnetic semiconductor devices.
Key words:sol-gel; Zn1-xCoxO thin film; dilute magnetic semiconductor (DMS);
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