Optical and Electrical Properties of Hydrogenated Silicon Oxide Thin Films Deposited by PECVD
来源期刊：Journal Of Wuhan University Of Technology Materials Science Edition2014年第5期
论文作者：沈华龙 WANG Hui YAN Hui ZHANG Ming PAN Qingtao JIA Haijun 麦耀华
文章页码：900 - 905
摘 要：In this work, n-type amorphous silicon oxide thin films were deposited by RF-PECVD method using a gas mixture of SiH4, CO2, H2, and PH3. The deposition rate, refractive index, band gap, crystalline volume fraction, and conductivity of the silicon oxide thin films were determined and analyzed. The film with refractive index of 1.99, band gap of 2.6e V and conductivity of 10-7 S/cm was obtained, which was suitable for the intermediate refl ector layer.
沈华龙1,2，WANG Hui2，YAN Hui1，ZHANG Ming1，PAN Qingtao2，JIA Haijun2，麦耀华2
1. Laboratory of Thin Film Materials, College of Materials Science and Engineering, Beijing University of Technology2. Baoding Tianwei Solar Films Co., Ltd
摘 要：In this work, n-type amorphous silicon oxide thin films were deposited by RF-PECVD method using a gas mixture of SiH4, CO2, H2, and PH3. The deposition rate, refractive index, band gap, crystalline volume fraction, and conductivity of the silicon oxide thin films were determined and analyzed. The film with refractive index of 1.99, band gap of 2.6e V and conductivity of 10-7 S/cm was obtained, which was suitable for the intermediate refl ector layer.
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