亚微米SiC粉体的氧化过程

来源期刊：中国有色金属学报2000年第4期

论文作者：李小斌 周秋生 刘业翔 熊翔 郝杰

文章页码：560 - 563

关键词：亚微米级SiC粉体； 氧化； 热力学；动力学

Key words：sub-micrometer SiC powder; oxidation; thermodynamics; kinetics

摘    要：从热力学和动力学角度研究了亚微米级SiC粉体的氧化过程， 结果表明： 当温度低于800 ℃， 亚微米级的SiC粉体很难在空气中氧化； 但在较高温度下(900～1 200 ℃)极易氧化， 且服从抛物线速度方程， 受氧气通过SiO₂氧化膜的内扩散控制， 反应的平均表观活化能为143.4 kJ/mol。

Abstract: The oxidation of silicon carbide was investigated from both thermodynamic and kinetics aspects. The results indicated that the oxidation of silicon carbide is very easy to take place in the oxygen atmosphere at high temperature. It waspostulated that the inward diffusion of oxygen through the growing silicon dioxidelayer formed on the surface of silicon carbide particles during oxidation period, is the rate-determining step. The apparent activation energy inthis process was also obtained as 143.4 kJ/mol over the temperature range from 1 173.15 K to 1 473.15 K.