Optical Absorption Properties of Electron Beam Evaporated a-Si1-xGdx Films
来源期刊：Journal of Rare Earths1991年第4期
论文作者：甘润今 张仿清 张津岩 刘国汉 陈光华
文章页码：289 - 293
摘 要：<正> Optical absorption properties of electron beam evaporated a-Si films(a-Si1-xGdx films)are studied forvarious composition x.It is shown from the experimental results that variation of chemical composition in thiskind of materials will lead to a change in near infrared absorption.For 0.1 at%<x<1.0 at%,the changes of op-tical absorption in the films are more sensitive.The optical band gap narrows with increasing content x from 1.52to 1.36 eV.Doping Gd element properly will be able to compensate the dangling bonds in a-Si films to improvethermal stability and mechanical properties of a-Si films.
甘润今，张仿清，张津岩，刘国汉，陈光华
摘 要：<正> Optical absorption properties of electron beam evaporated a-Si films(a-Si1-xGdx films)are studied forvarious composition x.It is shown from the experimental results that variation of chemical composition in thiskind of materials will lead to a change in near infrared absorption.For 0.1 at%<x<1.0 at%,the changes of op-tical absorption in the films are more sensitive.The optical band gap narrows with increasing content x from 1.52to 1.36 eV.Doping Gd element properly will be able to compensate the dangling bonds in a-Si films to improvethermal stability and mechanical properties of a-Si films.
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