SiC_p/Al室温阻尼性能与应变振幅的相关性

来源期刊：中国有色金属学报2000年第z1期

论文作者：王锦程 张忠明 杨根仓

文章页码：55 - 59

关键词：胞元法； 金属基复合材料； 阻尼性能； 应变振幅

Key words：cell method； SiC_p/Al； damping capacity； strain amplitude

摘    要：从细观力学观点出发 ,利用胞元法对颗粒增强金属基复合材料SiC_p/Al的阻尼特性进行了数值模拟 ,研究了应变振幅对室温下SiC_p/Al复合材料的阻尼性能的影响。结果表明 :在应变振幅ε₀较低的条件下 ,阻尼性能与应变振幅无关 ;当应变振幅ε₀ 达到一临界应变振幅ε_crit后材料的阻尼性能随着应变振幅的增大而迅速增大。所得的模拟结果与G-L位错阻尼模型吻合较好 ,表明SiC_p/Al复合材料的室温阻尼性能主要是材料中两相在循环载荷作用下变形不一致而在相界面处产生局部微塑性变形造成的。

Abstract: The dependence of the damping capacity of SiC_p/Al composite at room temperature on strain amplitude has been simulated by employing cell method. The results show that the damping capacity of SiC_p/Al composite is independent of the stain amplitude ε₀ when ε₀ is comparatively low. Meanwhile, when the stain amplitude ε₀ reaches a critical value ε_crit, the damping capacity increases rapidly with the increase of strain amplitude ε₀. The results also show good coincidence to the G-L dislocation damping model. It can be concluded that the damping capacity’s dependence on the strain amplitude ε₀ is due to the energy dissipation caused by plastic deformation energy dissipation near the interface of SiC_p/Al for the difference of the elastic modulus.