氢还原法制备低相变温度掺钨VO₂薄膜

来源期刊：钢铁钒钛2010年第2期

论文作者：李敏娇 张述林 丁秀敏 罗祎 熊苗

文章页码：6 - 9

关键词：二氧化钒； 薄膜； 相变温度； 掺钨； 氢还原

Key words：vanadium dioxide； thin film； phase transition temperature； tungsten-doped； hydrogen reduction

摘    要：在钒溶胶中掺入适量聚钨酸溶胶,采用浸渍提拉法在载玻片上涂膜,涂片薄膜在氢气氛围中、在400℃温度下还原3h,制得掺钨VO₂薄膜。金相显微镜观察到薄膜呈VO₂的特征绿色;X荧光光谱分析得出薄膜中W、V的含量分别为3.212%和64.97%。电阻-温度曲线测试表明,VO₂薄膜的相变温度为40.5℃,热滞回线宽度为ΔT=11℃,电阻突变量ΔS达到4.06个数量级。

Abstract: V₂O₅ film was first fabricated by dipping a glass slide into a V₂O₅ gel containing a small quantity of polytungstate sol.Then the V₂O₅ film was reduced in hydrogen atmosphere at 400℃ for 3 h and then a tungsten-doped VO₂ thin film was prepared.The resulted film shows the characteristic green of VO₂.the content of W and V is 3.212% and 64.97%,respectively.The results of the curve of resistance-temperature show that the phase transition temperature of the VO₂ thin film is 40.5℃,the thermal hysteresis loop width is ΔT = 11℃,amount of resistance mutation(ΔS) is 4.06 orders of magnitude.