Effect of Oxygen Partial Pressure on Epitaxial Growth and Properties of Laser-Ablated AZO Thin Films
来源期刊：Journal Of Wuhan University Of Technology Materials Science Edition2016年第1期
论文作者：王传彬 LUO Sijun SHEN Qiang 张联盟
文章页码：27 - 30
摘 要：Al-doped ZnO（AZO） thin films were grown on c-sapphire substrates by laser ablation under different oxygen partial pressures(PO2).The effect of PO2 on the crystal structure,preferred orientation as well as the electrical and optical properties of the films was investigated.The structure characterizations indicated that the as-grown films were single-phased with a wurtzite ZnO structure,showing a significant c-axis orientation.The films were well crystallized and exhibited better crystallinity and denser texture when deposited at higher PO2.At the optimum oxygen partial pressures of 10- 15 Pa,the AZO thin films were epitaxially grown on c-sapphire substrates with the（0001） plane parallel to the substrate surface,i e,the epitaxial relationship was AZO（000 1） // A12O3（000 1）.With increasing PO2,the value of Hall carrier mobility was increased remarkably while that of carrier concentration was decreased slightly,which led to an enhancement in electrical conductivity of the AZO thin films.All the films were highly transparent with an optical transmittance higher than 85%.
王传彬1,2，LUO Sijun1，SHEN Qiang1，张联盟1
1. State Key Lab of Advanced Technology for Materials Synthesis and Processing,Wuhan University of Technology2. Department of Chemical Engineering and Materials Science,University of California
摘 要：Al-doped ZnO（AZO） thin films were grown on c-sapphire substrates by laser ablation under different oxygen partial pressures(PO2).The effect of PO2 on the crystal structure,preferred orientation as well as the electrical and optical properties of the films was investigated.The structure characterizations indicated that the as-grown films were single-phased with a wurtzite ZnO structure,showing a significant c-axis orientation.The films were well crystallized and exhibited better crystallinity and denser texture when deposited at higher PO2.At the optimum oxygen partial pressures of 10- 15 Pa,the AZO thin films were epitaxially grown on c-sapphire substrates with the（0001） plane parallel to the substrate surface,i e,the epitaxial relationship was AZO（000 1） // A12O3（000 1）.With increasing PO2,the value of Hall carrier mobility was increased remarkably while that of carrier concentration was decreased slightly,which led to an enhancement in electrical conductivity of the AZO thin films.All the films were highly transparent with an optical transmittance higher than 85%.
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