Effects of oxygen pressure on La3Ga5SiO14 thin films grown by pulsed laser deposition
来源期刊：Journal of Rare Earths2010年第3期
论文作者：张雯 王继扬 季振国 李红霞 娄垚 姚淑华
文章页码：420 - 423
摘 要：La3Ga5SiO14 thin films were grown on Si（100） substrates by pulsed laser deposition at several oxygen pressures（5,10,and 20 Pa）.The effects of oxygen pressure on the structural and morphological characteristics of the films were investigated using X-ray diffraction,atomic force microscopy,and scanning electron microscopy.X-ray diffraction results showed the intensity of lines from crystallites oriented along the（300） and（220） planes increased as the oxygen pressure was increased to 20 Pa.The deposited films exhibited smooth surface as observed by atomic force microscopy and scanning electron microscopy.Photoluminescence measurements with 260 nm excitation showed that the films had emission in the ultraviolet and blue regions,and the luminescence intensity of the films increased with increasing oxygen pressured.We propose that these emissions originated from self-activated luminescence centers in the tetrahedral and octahedral Ga-O groups.
张雯1，王继扬1，季振国2，李红霞3，娄垚2，姚淑华1
1. State Key Laboratory of Crystal Materials,Shandong University2. Institute of Electronic Information,Hangzhou Dianzi University3. The MOE Key Laboratory of the Mechanical Manufacture and Automation,Zhejiang University of Technology
摘 要：La3Ga5SiO14 thin films were grown on Si（100） substrates by pulsed laser deposition at several oxygen pressures（5,10,and 20 Pa）.The effects of oxygen pressure on the structural and morphological characteristics of the films were investigated using X-ray diffraction,atomic force microscopy,and scanning electron microscopy.X-ray diffraction results showed the intensity of lines from crystallites oriented along the（300） and（220） planes increased as the oxygen pressure was increased to 20 Pa.The deposited films exhibited smooth surface as observed by atomic force microscopy and scanning electron microscopy.Photoluminescence measurements with 260 nm excitation showed that the films had emission in the ultraviolet and blue regions,and the luminescence intensity of the films increased with increasing oxygen pressured.We propose that these emissions originated from self-activated luminescence centers in the tetrahedral and octahedral Ga-O groups.
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