Fabrication and Luminescence Properties of Eu3+ Doped SiO2 Thin Films
来源期刊：Journal of Rare Earths2007年第S1期
论文作者：万能 林涛 王涛 徐骏 李伟 徐岭
文章页码：330 - 333
摘 要：Rare earth doped silica films were prepared by sol-gel method accompanied with the spin-coating process. It was found that the photoluminescence （PL） property of the thin films was dependent strongly on the doping amount of Eu3+. For thin films annealed at 700 ℃, the PL intensity increased constantly as elevating the doping amount up to 10% without any evident concentration quench, which indicated the good doping property of the SiO2 matrix. In order to further improve the PL efficiency, co-doping of Tb3+ into SiO2∶Eu3+ thin films were also investigated. It was found that the luminescence intensity was obviously enhanced by co-doping which could be explained in terms of the effective energy transfer from Tb3+ to Eu3+.
万能，林涛，王涛，徐骏，李伟，徐岭
摘 要：Rare earth doped silica films were prepared by sol-gel method accompanied with the spin-coating process. It was found that the photoluminescence （PL） property of the thin films was dependent strongly on the doping amount of Eu3+. For thin films annealed at 700 ℃, the PL intensity increased constantly as elevating the doping amount up to 10% without any evident concentration quench, which indicated the good doping property of the SiO2 matrix. In order to further improve the PL efficiency, co-doping of Tb3+ into SiO2∶Eu3+ thin films were also investigated. It was found that the luminescence intensity was obviously enhanced by co-doping which could be explained in terms of the effective energy transfer from Tb3+ to Eu3+.
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