Structure and topological transport in Pb-doping topological crystalline insulator SnTe（001） film
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2020年第9期
论文作者：C.H.Yan F.Wei Y.Bai F.Wang A.Q.Zhang S.Ma W.Liu Z.D.Zhang
文章页码：223 - 228
摘 要：Topological crystalline insulator（TCI） as a new type of topological materials has attracted extensive research interests for its tunable topological properties. Due its symmetry topological protection essence,the structure investigation provides a solid basement for tuning its topological transport properties.On Sr TiO3（111） substrate, the Sn Te film was found to be epitaxial growth only along [001] while not[111] direction. The detailed structural study was performed and a structural model was proposed to elucidate epitaxial growth of the Sn Te（001） film. The transport properties of Sn Te（001） film were further investigated and a typical weak anti-localization effect was observed. By Pb-doping into Sn Te, the bulk carriers were inhibited and its topological surface states were strengthened to induce the enhanced surface transport contribution. With tunable multiple transport channels from the even Dirac cones, the TCI Sn Te film systems will have the potential application in future spintronics devices.
C.H.Yan1,2，F.Wei1,2，Y.Bai1,2，F.Wang1,2，A.Q.Zhang1,3，S.Ma1，W.Liu1，Z.D.Zhang1
1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences2. University of Chinese Academy of Sciences3. School of Materials Science and Engineering, University of Science and Technology of China
摘 要：Topological crystalline insulator（TCI） as a new type of topological materials has attracted extensive research interests for its tunable topological properties. Due its symmetry topological protection essence,the structure investigation provides a solid basement for tuning its topological transport properties.On Sr TiO3（111） substrate, the Sn Te film was found to be epitaxial growth only along [001] while not[111] direction. The detailed structural study was performed and a structural model was proposed to elucidate epitaxial growth of the Sn Te（001） film. The transport properties of Sn Te（001） film were further investigated and a typical weak anti-localization effect was observed. By Pb-doping into Sn Te, the bulk carriers were inhibited and its topological surface states were strengthened to induce the enhanced surface transport contribution. With tunable multiple transport channels from the even Dirac cones, the TCI Sn Te film systems will have the potential application in future spintronics devices.
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