铝在硅中的固溶度
来源期刊:中南大学学报(自然科学版)1990年第2期
论文作者:王蔚国 谭淞生
文章页码:198 - 203
关键词:液相外延生长; 溶解度; 分凝; 迁移率; 相图; 硅; 铝; 温度
Key words:liquid phase epitaxial growth; solubility; segregation; mobility; phase liagrams; silicon; aluminium; temperature
摘 要:本工作通过对过去测定铝在硅中的固溶度的部分文章和数据较详细的分析,采用液相外延方法在温度区域700℃到1000℃之间,测得固溶度界于4×1018~1.5×1019atoms/cm3,计算出相应的分凝系数,推得硅熔点1415℃的分凝系数为1.8×10-3,微分溶解热0.6eV。
Abstract: The solid solubilities of impurity element aluminum in silicon has beenstudied by means of the method of liquid phase epitaxial growth. We measuredthe solid solubilities, which are 4×1018 to 1.5×1019 atoms/cm3 in the temperatureregion from 700℃ to 1000℃, and calculated the corresponding segregation coe-fficient, which is 1.8×10-3 at temperature 1415℃ of melt point of silicon. Itis also deduced that the differential heat of solution is 0.6 eV. Some previousstudies and values have been analysed and commented in detail.