Electrochemical behaviors of silicon wafers in silica slurry

Xiaolan Song1), Haiping Yang1), Xunda Shi2), Xi He1), and Guanzhou Qiu1) 1) Department of Inorganic Materials, School of Minerals Processing and Bioengineering, Central South University, Changsha 410083, China 2) Silicon Wafer Manufacture Department, Grinm Semiconductor Materials Co. Ltd., Beijing 100088, China

摘 要：The electrochemical behaviors of n-type silicon wafers in silica-based slurry were investigated, and the influences of the pH value and solid content of the slurry on the corrosion of silicon wafers were studied by using electrochemical DC polarization and AC impedance techniques. The results revealed that these factors affected the corrosion behaviors of silicon wafers to different degrees and had their suitable parameters that made the maximum corrosion rate of the wafers. The corrosion potential of （100） surface was lower than that of （111）, whereas the current density of （100） was much higher than that of （111）.

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