Current-voltage characteristics with several threshold currents in insulating low-doped La1-xSrxMnO3 (x=0.10) thin films
来源期刊：JOURNAL OF RARE EARTHS2008年第4期
论文作者：YANG Guozhen3 JIN Kuijuan L HE Meng ZHOU Yueliang ZHAO Kun FENG Jiafeng
Key words：current-induced resistive effect; manganites; voltage-current characteristic; rare earths;
Abstract: The current-induced resistive switching behavior in the micron-scale pillars of low-doped La0.9Sr0.1MnO3 thin films using laser molecular-beam epitaxy was reported. It was demonstrated that the current-voltage curves at 120 K showed hysteresis with several threshold currents corresponding to the switching in resistance to metastable low resistance states, and finally, four closed loops were formed. A mode was proposed, which was based on the low-temperature canted antiferromagnetism ordering for a lightly doped insulating regime.
YANG Guozhen31，JIN Kuijuan1，L2，HE Meng1，ZHOU Yueliang1，ZHAO Kun3，FENG Jiafeng5
(1.U;
2.U) Huibin(U;
3.Department of Mathematics and Physics, China University of Petroleum, Beijing 102249, China;
4.International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China;
5.State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China)
Abstract:The current-induced resistive switching behavior in the micron-scale pillars of low-doped La0.9Sr0.1MnO3 thin films using laser molecular-beam epitaxy was reported. It was demonstrated that the current-voltage curves at 120 K showed hysteresis with several threshold currents corresponding to the switching in resistance to metastable low resistance states, and finally, four closed loops were formed. A mode was proposed, which was based on the low-temperature canted antiferromagnetism ordering for a lightly doped insulating regime.
Key words:current-induced resistive effect; manganites; voltage-current characteristic; rare earths;
【全文内容正在添加中】
