Low-Angle Grain Boundaries in Sublimation Grown 6H-SiC Crystals
来源期刊：JOURNAL OF RARE EARTHS2006年增刊第1期
论文作者：Jiang Shouzhen Chen Xiufang Xu Xiangang Dong Jie Li Xianxiang Hu Xiaobo
Key words：low-angle grain boundaries; sublimation; 6H-SiC; radial temperature gradient;
Abstract: High-resolution X-ray diffractometry (HRXRD) was used to assess the quality of 6H-SiC crystals grown by sublimation method. The results show the occurrence of low-angle grain boundaries (LB) is close relative to the inclination of the crystal interface. At the central faceted region with 0° inclination the crystal is of high structural perfection. However, at the region close to the facet with less than 5° inclination LB occurs slightly and at the region close to the peripheral polytype ring with more than 5° inclination LB defect occurs heavily. The density of LB can be drastically reduced by decreasing radial temperature gradient that determines the shape of the crystal growth interface.
Jiang Shouzhen1，Chen Xiufang1，Xu Xiangang1，Dong Jie1，Li Xianxiang1，Hu Xiaobo1
(1.State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China)
Abstract:High-resolution X-ray diffractometry (HRXRD) was used to assess the quality of 6H-SiC crystals grown by sublimation method. The results show the occurrence of low-angle grain boundaries (LB) is close relative to the inclination of the crystal interface. At the central faceted region with 0° inclination the crystal is of high structural perfection. However, at the region close to the facet with less than 5° inclination LB occurs slightly and at the region close to the peripheral polytype ring with more than 5° inclination LB defect occurs heavily. The density of LB can be drastically reduced by decreasing radial temperature gradient that determines the shape of the crystal growth interface.
Key words:low-angle grain boundaries; sublimation; 6H-SiC; radial temperature gradient;
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