Transfer-free CVD graphene for highly sensitive glucose sensors
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2020年第2期
论文作者：Shijing Wei Yabin Hao Zhe Ying Chuan Xu Qinwei Wei Sen Xue Hui-Ming Cheng Wencai Ren Lai-Peng Ma You Zeng
文章页码：71 - 76
摘 要：Chemical vapor deposition（CVD） graphene film is a promising electrode-modifying material for fabricating high-performance glucose sensor due to its high electrical conductivity and two-dimensional structure over large area. However, the use of typical metal-based CVD graphene suffers from the residue contamination of polymer transfer-support and heavy metal ions. In this work, we directly grew fewlayer graphene on the SiO2/Si substrate without transfer process and then fabricated graphene-based glucose sensors by sequentially immobilizing glucose oxidase and depositing Nafion layer on its surface that was functionalized by oxygen-plasma treatment. Our transfer-and metal-free process shows distinct advantage over the common metal-CVD method in improving the electrochemical performance by eliminating the contamination of transfer-residue. Thus-obtained glucose sensor shows a high sensitivity(16.16 μA mM-1cm-2) with a detection limit of 124.19 μM. This method is simple and promising for the development of highly sensitive glucose sensors.
Shijing Wei1,2,3,4，Yabin Hao1,5，Zhe Ying1，Chuan Xu1，Qinwei Wei1,5，Sen Xue1,6，Hui-Ming Cheng1,2,5,7，Wencai Ren1,5，Lai-Peng Ma1,5，You Zeng1,5
1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences2. School of Physical Science and Technology, Shanghai Tech University3. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences4. University of Chinese Academy of Sciences5. School of Materials Science and Engineering, University of Science and Technology of China6. School of Materials Science and Engineering, Northeastern University7. Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University
摘 要：Chemical vapor deposition（CVD） graphene film is a promising electrode-modifying material for fabricating high-performance glucose sensor due to its high electrical conductivity and two-dimensional structure over large area. However, the use of typical metal-based CVD graphene suffers from the residue contamination of polymer transfer-support and heavy metal ions. In this work, we directly grew fewlayer graphene on the SiO2/Si substrate without transfer process and then fabricated graphene-based glucose sensors by sequentially immobilizing glucose oxidase and depositing Nafion layer on its surface that was functionalized by oxygen-plasma treatment. Our transfer-and metal-free process shows distinct advantage over the common metal-CVD method in improving the electrochemical performance by eliminating the contamination of transfer-residue. Thus-obtained glucose sensor shows a high sensitivity(16.16 μA mM-1cm-2) with a detection limit of 124.19 μM. This method is simple and promising for the development of highly sensitive glucose sensors.
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