Recent progress in diamond-based MOSFETs

Xiao-lu Yuan^1,2，Yu-ting Zheng¹，Xiao-hua Zhu¹，Jin-long Liu¹，Jiang-wei Liu³，Cheng-ming Li¹，Peng Jin^2,4，Zhan-guo Wang^2,4

1. Institute for Advanced Materials and Technology, University of Science and Technology Beijing2. Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences3. Research Center for Functional Materials, National Institute for Materials Science (NIMS)4. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences

摘 要：Recent developments in the use of diamond materials as metal-oxide-semiconductor field-effect transistors（MOSFETs） are introduced in this article, including an analysis of the advantages of the device owing to the unique physical properties of diamond materials, such as their high-temperature and negative electron affinity characteristics. Recent research progress by domestic and international research groups on performance improvement of hydrogen-terminated and oxygen-terminated diamond-based MOSFETs is also summarized. Currently, preparation of large-scale diamond epitaxial layers is still relatively difficult, and improvements and innovations in the device structure are still ongoing. However, the key to improving the performance of diamond-based MOSFET devices lies in improving the mobility of channel carriers. This mainly includes improvements in doping technologies and reductions in interface state density or carrier traps. These will be vital research goals for the future of diamond-based MOSFETs.

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