Nanocrystalline Diamond Films Deposited by Electron Assisted Hot Filament Chemical Vapor Deposition
来源期刊：JOURNAL OF RARE EARTHS2006年增刊第1期
论文作者：Wang Linjun Xia Yiben Tan Shouhong Wu Nanchun
Key words：nanocrystalline diamond film; surface roughness; resistivity; EACVD;
Abstract: Nanocrystalline diamond films were deposited on polished Si wafer surface with electron assisted hot filament chemical vapor deposition at 1 kPa gas pressure, the deposited films were characterized and observed by Raman spectrum, X-ray diffraction, atomic force microscopy and semiconductor characterization system. The results show that when 8 A bias current is applied for 5 h, the surface roughness decreases to 28.5 nm. After 6 and 8 A bias current are applied for 1 h, and the nanocrystalline films deposition continue for 4 h with 0 A bias current at 1 kPa gas pressure. The nanocrystalline diamond films with 0.5×109 and 1×1010 Ω·cm resistivity respectively are obtained. It is demonstrated that electron bombardment plays an important role of nucleation to deposit diamond films with smooth surface and high resistivity.
Wang Linjun1，Xia Yiben1，Tan Shouhong2，Wu Nanchun1
(1.School of Materials Science & Engineering, Shanghai University, Shanghai 200072, China;
2.Shanghai Institute of Ceramics, Chinese Academy of China, Shanghai 200050, China)
Abstract:Nanocrystalline diamond films were deposited on polished Si wafer surface with electron assisted hot filament chemical vapor deposition at 1 kPa gas pressure, the deposited films were characterized and observed by Raman spectrum, X-ray diffraction, atomic force microscopy and semiconductor characterization system. The results show that when 8 A bias current is applied for 5 h, the surface roughness decreases to 28.5 nm. After 6 and 8 A bias current are applied for 1 h, and the nanocrystalline films deposition continue for 4 h with 0 A bias current at 1 kPa gas pressure. The nanocrystalline diamond films with 0.5×109 and 1×1010 Ω·cm resistivity respectively are obtained. It is demonstrated that electron bombardment plays an important role of nucleation to deposit diamond films with smooth surface and high resistivity.
Key words:nanocrystalline diamond film; surface roughness; resistivity; EACVD;
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