A flexible thermoelectric device based on a Bi2Te3-carbon nanotube hybrid
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2020年第23期
论文作者：Ying Li Jixiang Qiao Yang Zhao Qing Lan Pengyan Mao Jianhang Qiu Kaiping Tai Chang Liu Huiming Cheng
摘 要：Thermoelectric（TE） materials and devices have attracted great attention due to their ability to convert waste heat to electrical power and active cooling. However, the conventional bulk TE materials are inorganic semiconductors with inherent brittleness and rigidity. They cannot closely contact curved heat sources and sinks, which limits their application in modern electronics. It remains a big challenge to fabricate high-performance TE materials and devices with good flexibility. Here, we report a flexible TE device comprised of a single wall carbon nanotube（SWCNT） network and（000 l）-textured Bi2Te3 nanocrystals prepared by a magnetron sputtering technique. The unique Bi2Te3-SWCNT hybrid structure has a TE figure of merit（ZT） value of ～0.23 at ～330 K. A prototype TE device made of this hybrid gives a maximum output power density of ～0.93 m W cm-2 under a temperature difference of 25 K at ambient temperature and shows good flexibility under bending. Our results open up a new way to the development of flexible TEs and their application in self-powered portable devices.
Ying Li1,2，Jixiang Qiao1,2，Yang Zhao1,2，Qing Lan3，Pengyan Mao1,2，Jianhang Qiu1,2，Kaiping Tai1,2，Chang Liu1,2，Huiming Cheng1,2,4
1. Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences2. School of Materials Science and Engineering,University of Science and Technology of China3. Key Lab of Electromagnetic Processing of Materials,Ministry of Education,Northeastern University4. Tsinghua-Berkeley Shenzhen Institute,Tsinghua University
摘 要：Thermoelectric（TE） materials and devices have attracted great attention due to their ability to convert waste heat to electrical power and active cooling. However, the conventional bulk TE materials are inorganic semiconductors with inherent brittleness and rigidity. They cannot closely contact curved heat sources and sinks, which limits their application in modern electronics. It remains a big challenge to fabricate high-performance TE materials and devices with good flexibility. Here, we report a flexible TE device comprised of a single wall carbon nanotube（SWCNT） network and（000 l）-textured Bi2Te3 nanocrystals prepared by a magnetron sputtering technique. The unique Bi2Te3-SWCNT hybrid structure has a TE figure of merit（ZT） value of ～0.23 at ～330 K. A prototype TE device made of this hybrid gives a maximum output power density of ～0.93 m W cm-2 under a temperature difference of 25 K at ambient temperature and shows good flexibility under bending. Our results open up a new way to the development of flexible TEs and their application in self-powered portable devices.
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