Growth of N-polar GaN on vicinal sapphire substrate by metal organic chemical vapor deposition
来源期刊：Rare Metals2014年第6期
论文作者：Can-Tao Zhong Guo-Yi Zhang
文章页码：709 - 713
摘 要：The growth and properties of N-polar Ga N layers by metal organic chemical vapor deposition（MOCVD） were reported. It is found that N-polar Ga N grown on normal sapphire substrate shows hexagonal hillock surface morphology. With the misorientation angles increasing from 0.5° to 2.0° toward the a-plane of the sapphire substrate, the number of the hillock becomes less and less and finally the surface becomes flat one on the sapphire substrate with the misorientation angle of 2°. It is also found that the crystalline quality and the strain in the Ga N are greatly influenced by the misorientation angle.
Can-Tao Zhong，Guo-Yi Zhang
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University
摘 要：The growth and properties of N-polar Ga N layers by metal organic chemical vapor deposition（MOCVD） were reported. It is found that N-polar Ga N grown on normal sapphire substrate shows hexagonal hillock surface morphology. With the misorientation angles increasing from 0.5° to 2.0° toward the a-plane of the sapphire substrate, the number of the hillock becomes less and less and finally the surface becomes flat one on the sapphire substrate with the misorientation angle of 2°. It is also found that the crystalline quality and the strain in the Ga N are greatly influenced by the misorientation angle.
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