高致密细晶W-25Cu触头材料的电接触性能

来源期刊:中国有色金属学报2017年第3期

论文作者:万成 李继文 王展 马窦琴 魏世忠 张国赏 徐流杰

文章页码:504 - 514

关键词:高致密;细晶;接触电阻;电弧侵蚀;材料转移

Key words:high density; fine grain; contact resistance; arc erosion; materials transfer

摘    要:由水热-共还原法制备出的原位共生W-25Cu复合粉末,经冷等静压、真空热压联合包套挤压工艺获得相对密度大于98%,导电率为42.7%IACS,硬度为246HB的高致密细晶W-25Cu电触头材料。材料显微组织中W相和Cu相分布均匀,颗粒细小(1~3 μm)。在JF04C型电接触试验机上进行电接触实验,研究其在直流、阻性负载条件下的电接触性能。结果表明:提高钨铜合金致密度、细化晶粒可以减小并稳定接触电阻;燃弧时间和燃弧能量均随电压的增大而增大,分断过程燃弧能量和燃弧时间均小于闭合过程燃弧时间和能量。W-25Cu电触头材料经电侵蚀后,材料表面主要由Cu、W和WO3三相组成。电接触过程中发生的材料转移以熔桥转移、电弧转移和喷溅蒸发等形式为主;随着电压的增大,发生材料转移方向的转变,即由阴极转移变为阳极转移。

Abstract: The W-25Cu electrical contact material was fabricated by cold isostatic pressing process, presintering in vacuum and hot extrusion of W-Cu nanocomposite powders that was made by hydrothermal synthesis combined with co-reduction method. The relative density of W-25Cu electrical contact materiel is above 98%, the conductivity reaches 42.7%IACS, and the hardness is 246HB. The distribution of W phase and Cu phase are uniform and the particle size of W phase is fine (1-3 μm). The arc tests were carried out under DC and resistance load conditions through JF04C electrical material testing system. The results show that increasing the density and decreasing the grain size of tungsten copper alloy can reduce and stabilize the contact resistance. Arc time and energy increase along with the increasing of voltage, and the arc time and energy of break operation are less than that of make operation. The surface material mainly compose of Cu, W and WO3 phases of W-25Cu electrical contact materials after being eroded. Melting bridge transfer, arc transfer and spray evaporation are mainly transfer forms, and the material transfer direction changes with the increasing of voltage, namely, the mass loss transfers from cathode to anode.

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