Additive-aided electrochemical deposition of bismuth telluride in a basic electrolyte

Wu-jun Qiu,Sheng-nan Zhang,Tie-jun Zhu,and Xin-bing Zhao State Key Laboratory of Silicon Materials,Department of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China

摘 要：<正>A new basic electrolyte with two cationic plating additives,polydiaminourea and polyaminosulfone,was investigated for the electrochemical deposition of the bismuth telluride film on a nickel-plated copper foil.Tellurium starts to deposit at a higher potential（-0.35 V） than bismuth（-0.5 V） in this electrolyte.The tellurium-to-bismuth ratio increases while the deposition potential declines from-1 to-1.25 V, indicating a kinetically quicker bismuth deposition at higher potentials.The as-deposited film features good adhesion to the substrate and smooth morphology,and has a nearly amorphous crystal structure disclosed by X-ray diffraction patterns.

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