Analysis of the SiOx Film Microstructure on Al Substrate by APCVD Process
来源期刊：材料热处理学报2004年第5期
论文作者：WANG You-wen GAN Zheng-hao WO Yin-hua ZHANG Ji-liang LI Jian
关键词：Ambient Pressure Chemical Vapor Deposition(APCVD); SiOx film on aluminum substrate; Microstructure;
摘 要：A new kind of SiOx filmon Al substrate,prepared by Ambient Pressure Chemical Vapor Deposition (APCVD) is reported in this paper. It is proposed that the SiOx particles as products of SiH4 and O2 reaction deposited on the heated Al surface, followed by close packing and further growth to form the thin film. The morphology, composition and microstructure of the film are characterized by SEM, XPS, XRD and HRTEM. The results show that the SiOx film comprises a majority of uncrystalline structure with a fraction of dispersed ordered zones and the atomic ratio of Si/O in the film is 1:1.60～1:1.75. The tests show that the film is well-bonded with the substrate.
WANG You-wen1，GAN Zheng-hao2，WO Yin-hua1，ZHANG Ji-liang1，LI Jian1
(1.Material Science and Engineering Department, Zhejiang University, Hangzhou, P.R. China;
2.School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore)
摘要:A new kind of SiOx filmon Al substrate,prepared by Ambient Pressure Chemical Vapor Deposition (APCVD) is reported in this paper. It is proposed that the SiOx particles as products of SiH4 and O2 reaction deposited on the heated Al surface, followed by close packing and further growth to form the thin film. The morphology, composition and microstructure of the film are characterized by SEM, XPS, XRD and HRTEM. The results show that the SiOx film comprises a majority of uncrystalline structure with a fraction of dispersed ordered zones and the atomic ratio of Si/O in the film is 1:1.60～1:1.75. The tests show that the film is well-bonded with the substrate.
关键词:Ambient Pressure Chemical Vapor Deposition(APCVD); SiOx film on aluminum substrate; Microstructure;
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