a-C∶F∶H films prepared by PECVD
来源期刊：中国有色金属学报(英文版)2004年第3期
论文作者：肖剑荣 刘雄飞 简献忠 王金斌 高金定
文章页码：426 - 429
Key words：a-C∶F∶H thin films; PECVD; dielectric constant; optical band gap
Abstract: Fluorinated amorphous hydrogenated a-C∶F∶H carbon thin films were deposited using radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) reactor with CF4and CH4as source gases and were annealed in a N2 at- mosphere. The properties of these films were evaluated by FTIR spectrometry, UV-VIS spectrophotometry and single wavelength spectroscopic ellipsometry. A correspondence relativity connection between the deposition rate and technology was found. The chemical bonding structures and the content of CHx and CFx in the films are transformed and the optical band gap decreases monotonically with increasing temperature after annealing. The dielectric constant is increased with decreasing content of F in the films and the optical band gap is decreased with decreasing the content of H in the film.
