Preparation and Effect of Oxygen Annealing on the Electrical and Magnetic Properties of Epitaxial （0001） Zn1-xCoxO Thin Films
来源期刊：Journal Of Wuhan University Of Technology Materials Science Edition2013年第5期
论文作者：罗嗣俊 张联盟 WANG Chuanbin ZHOU Xuan SHEN Qiang
文章页码：893 - 897
摘 要：Epitaxial（0001）-oriented Zn1-xCoxO（x=0.01,0.05 and 0.1） thin films were grown on c-sapphire substrates by pulsed laser deposition.The XRD analysis,optical transmittance and XPS measurements revealed that the Co2+substituted Zn2+ions were incorporated into the lattice of ZnO in Zn1-xCoxO thin films.The electrical properties measurements revealed that the Co concentration had a nonmonotonic influence on the electrical properties of the Zn1-xCoxO thin films due to the defects resulted from imperfections induced by Co substitution.The resistivity remarkably increased and the carrier concentration remarkably decreased in Zn1-xCoxO thin films after oxygen annealing at 600 ℃ under 15 PaO2 pressure for 60 mins.Room-temperature ferromagnetic was observed and the ferromagnetic Co amount was smaller than the nominal Co concentration for Zn1-xCoxO samples before oxygen annealing.After oxygen annealing,the Zn1-xCoxO thin films exhibited paramagnetic behavior.It is suggested that the room-temperature ferromagnetic of Zn1-xCoxO thin films may attribute to defects or carriers induced mechanism.
罗嗣俊，张联盟，WANG Chuanbin，ZHOU Xuan，SHEN Qiang
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Wuhan University of Technology
摘 要：Epitaxial（0001）-oriented Zn1-xCoxO（x=0.01,0.05 and 0.1） thin films were grown on c-sapphire substrates by pulsed laser deposition.The XRD analysis,optical transmittance and XPS measurements revealed that the Co2+substituted Zn2+ions were incorporated into the lattice of ZnO in Zn1-xCoxO thin films.The electrical properties measurements revealed that the Co concentration had a nonmonotonic influence on the electrical properties of the Zn1-xCoxO thin films due to the defects resulted from imperfections induced by Co substitution.The resistivity remarkably increased and the carrier concentration remarkably decreased in Zn1-xCoxO thin films after oxygen annealing at 600 ℃ under 15 PaO2 pressure for 60 mins.Room-temperature ferromagnetic was observed and the ferromagnetic Co amount was smaller than the nominal Co concentration for Zn1-xCoxO samples before oxygen annealing.After oxygen annealing,the Zn1-xCoxO thin films exhibited paramagnetic behavior.It is suggested that the room-temperature ferromagnetic of Zn1-xCoxO thin films may attribute to defects or carriers induced mechanism.
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