Simulation aided hot zone design for faster growth of CZ silicon mono crystals
来源期刊：Rare Metals2011年第2期
论文作者：CAO Jianwei a,GAO Yu b,CHEN Ying a,ZHANG Guohu b,and QIU Minxiu a a The State Key Laboratory of Fluid Power Transmission and Control,Zhejiang University,Hangzhou ,China b GRINM Semiconductor Materials Co.Ltd,Beijing ,China
文章页码：155 - 159
摘 要：Computer simulation was used for optimizing a hot zone for Czochralski (CZ) silicon crystal growth.The heater structure and heat shield material were investigated.With this optimized hot zone,the temperature gradient near the crystal/melt interface increased and the CZ crystal could be grown at a faster rate.It is a great contribution for saving power consumption.
摘要：Computer simulation was used for optimizing a hot zone for Czochralski (CZ) silicon crystal growth.The heater structure and heat shield material were investigated.With this optimized hot zone,the temperature gradient near the crystal/melt interface increased and the CZ crystal could be grown at a faster rate.It is a great contribution for saving power consumption.
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