Luminescence Properties of Tb3+-Doped LuAG Films Prepared by Pechini Sol-Gel Method
来源期刊：JOURNAL OF RARE EARTHS2006年第6期
论文作者：Guo Hai Zhang Weiping Lin Lin Yin Min You Baogui
Key words：sol-gel; LuAG; luminescence properties; thin film; concentration dependence; rare earths;
Abstract: Lu3Al5O12 (LuAG) thin films with different Tb3+ concentration were prepared on carefully cleaned (111) silicon wafer by a Pechini process and dip-coating technique. Heat treatment was performed in the temperature range from 800 to 1100 ℃. The crystal structure was analyzed by XRD. The results show that LuAG film starts to crystallize at about 900 ℃, and the particle size increases with the sintering temperature. Excitation and emission spectra of Tb3+ doped LuAG films were measured. The effects of heat-treatment temperature and doping concentration of Tb3+ on the luminescent properties were also investigated. For a comparison study, Tb3+-doped LuAG powders were also prepared by the same sol-gel method.
Guo Hai1，Zhang Weiping2，Lin Lin3，Yin Min2，You Baogui2
(1.Department of Physics, Zhejiang Normal University, Jinhua 321004, China;
2.Structure Research Laboratory, Chinese Academy of Sciences, Hefei 230026, China;
3.Physics Department, University of Science and Technology of China, Hefei 230026, China)
Abstract:Lu3Al5O12 (LuAG) thin films with different Tb3+ concentration were prepared on carefully cleaned (111) silicon wafer by a Pechini process and dip-coating technique. Heat treatment was performed in the temperature range from 800 to 1100 ℃. The crystal structure was analyzed by XRD. The results show that LuAG film starts to crystallize at about 900 ℃, and the particle size increases with the sintering temperature. Excitation and emission spectra of Tb3+ doped LuAG films were measured. The effects of heat-treatment temperature and doping concentration of Tb3+ on the luminescent properties were also investigated. For a comparison study, Tb3+-doped LuAG powders were also prepared by the same sol-gel method.
Key words:sol-gel; LuAG; luminescence properties; thin film; concentration dependence; rare earths;
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