Synthesis of the CuInSe2 thin film for solar cells using the electrodeposition technique and Taguchi method
来源期刊：International Journal of Minerals Metallurgy and Materials2009年第1期
论文作者：Shu-huei Hsieh Wen-jauh Chen Pei-i Wei Jiing-herng Lee
文章页码：101 - 107
摘 要：The Taguchi method was used to obtain the optimum electrodeposition parameters for the synthesis of the CuInSe2 thin film for solar cells. The parameters consist of annealing temperature,current density,CuCl2 concentration,FeCl3 concentration,H2SeO3 concentration,TEA amount,pH value,and deposition time. The experiments were carried out according to an L18（2137） table. An X-ray diffractometer（XRD） and a scanning electron microscope（SEM） were respectively used to analyze the phases and observe the microstructure and the grain size of the CuInSe2 film before and after annealing treatment. The results showed that the CuInSe2 phase was deposited with a preferred plane（112） parallel to the substrate surface. The optimum parameters are as follows:current density,7 mA/cm2;CuCl2 concentration,10 mM;FeCl3 concentration,50 mM;H2SeO3 concentration,15 mM;TEA amount,0 mL;pH value,1.65;deposition time,10 min;and annealing temperature,500°C.
Shu-huei Hsieh1，Wen-jauh Chen2，Pei-i Wei1，Jiing-herng Lee1
1. Department of Materials Science and Engineering,Huwei Institute of Technology2. Graduate Institute of Materials Science,Yunlin University of Science and Technology
摘 要：The Taguchi method was used to obtain the optimum electrodeposition parameters for the synthesis of the CuInSe2 thin film for solar cells. The parameters consist of annealing temperature,current density,CuCl2 concentration,FeCl3 concentration,H2SeO3 concentration,TEA amount,pH value,and deposition time. The experiments were carried out according to an L18（2137） table. An X-ray diffractometer（XRD） and a scanning electron microscope（SEM） were respectively used to analyze the phases and observe the microstructure and the grain size of the CuInSe2 film before and after annealing treatment. The results showed that the CuInSe2 phase was deposited with a preferred plane（112） parallel to the substrate surface. The optimum parameters are as follows:current density,7 mA/cm2;CuCl2 concentration,10 mM;FeCl3 concentration,50 mM;H2SeO3 concentration,15 mM;TEA amount,0 mL;pH value,1.65;deposition time,10 min;and annealing temperature,500°C.
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