硅片的抗弯强度及其与高温抗形变能力的关系

来源期刊：中南大学学报(自然科学版)1995年第2期

论文作者：谢书银 石志仪 佘思明

文章页码：261 - 265

关键词：硅; 抗弯强度; 形变

Key words：silicon; flexure strength; deformation

摘    要：通过实验系统地研究了硅中氧、氮、碳含量和状态以及硅片表面损伤对室温下硅片抗弯强度的影响规律,讨论了室温抗弯强度与高温抗形变能力之间的内在联系,提出了室温抗弯强度大小可以反映硅片高温抗形变能力的观点。

Abstract: The effects of oxygen, nitrogen, carbon content and their configuration and surfacedamage on flexure strength of silcon wafer at room-temperature have been investigated through experiments. The inherent relations between the flexure strength and ability of anti-deformation at high temperature of silicon wafer have been discussed.From these results we believe that the flexure strength of silicon wafer may reflects its alility of anti-deformation athigh temperature to a certain degree.