Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Ag/ZnMn2O4/p+-Si Device
来源期刊：Journal Of Wuhan University Of Technology Materials Science Edition2018年第6期
论文作者：张玉佩 王华 XU Jiwen LI Zhida YANG Ling
文章页码：1433 - 1436
摘 要：ZnMn2O4 thin films were deposited by a sol-gel technique onto a p+-Si substrate, and a RRAM device with the Ag/ZnMn2O4/p+-Si structure was fabricated. The microstructure of ZnMn2O4 films and the resistive switching behavior of Ag/ZnMn2O4/p+-Si device were investigated. ZnMn2O4 thin films had a spinel structure after annealing at 650 °C for 1 h. The Ag/ZnMn2O4/p+-Si device showed unipolar and/or bipolar resistive switching behavior, exhibiting different ION/IOFF ratio and switching endurance properties. In bipolar resistive switching, high-resistance-state（HRS） conduction was dominated by the space-charge-limited conduction mechanism, whereas the filament conduction mechanism dictated the low resistance state（LRS）. For unipolar resistive switching, HRS and LRS were controlled by the filament conduction mechanism. For bipolar resistive switching, the conduction process can be explained by the space-charge region of the p-n junction.
张玉佩，王华，XU Jiwen，LI Zhida，YANG Ling
School of Materials Science and Engineering, Guilin University of Electronic Technology
摘 要：ZnMn2O4 thin films were deposited by a sol-gel technique onto a p+-Si substrate, and a RRAM device with the Ag/ZnMn2O4/p+-Si structure was fabricated. The microstructure of ZnMn2O4 films and the resistive switching behavior of Ag/ZnMn2O4/p+-Si device were investigated. ZnMn2O4 thin films had a spinel structure after annealing at 650 °C for 1 h. The Ag/ZnMn2O4/p+-Si device showed unipolar and/or bipolar resistive switching behavior, exhibiting different ION/IOFF ratio and switching endurance properties. In bipolar resistive switching, high-resistance-state（HRS） conduction was dominated by the space-charge-limited conduction mechanism, whereas the filament conduction mechanism dictated the low resistance state（LRS）. For unipolar resistive switching, HRS and LRS were controlled by the filament conduction mechanism. For bipolar resistive switching, the conduction process can be explained by the space-charge region of the p-n junction.
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