Resistive switching performance improvement of In GaZnO-based memory device by nitrogen plasma treatment
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2020年第14期
论文作者：Li Zhang Zhong Xu Jia Han Lei Liu Cong Ye Yi Zhou Wen Xiong Yanxin Liu Gang He
文章页码：1 - 6
摘 要：With the demand of flat panel display development, utilizing the non-volatile memory devices based on indium-gallium-zinc-oxide（IGZO） film may be integrated with IGZO thin film transistors（TFTs） to accomplish system-on-panel applications. In this work, 1 × 1 m2 via hole structure IGZO based memory device was fabricated and the resistive switching（RS） behavior was investigated. By inserting a nitrogen doping layer IGZO:N by plasma treatment in Pt/IGZO/Ti N device, highly improved RS performance including lower forming voltage, remarkable uniformity, large memory window of 102, retention property of 104 s at 125?C, excellent pulse endurance of 107 cycles were achieved. The X-ray photoelectron spectroscopy analysis indicates that plasma doping method can evenly dope nitrogen and induce more non-lattice oxygen in the IGZO film. It is deduced that the N atoms of the inserting layer can influence the random formation of oxygen vacancy type conducting filaments, which results in more stable and uniform performance.
Li Zhang1,2，Zhong Xu1，Jia Han1，Lei Liu1，Cong Ye1，Yi Zhou1，Wen Xiong1，Yanxin Liu1，Gang He3
1. Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Hubei Key Laboratory of Applied Mathematics2. School of Microelectronics, Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University3. School of Physics and Materials Science, Radiation Detection Materials & Device Lab, Anhui University
摘 要：With the demand of flat panel display development, utilizing the non-volatile memory devices based on indium-gallium-zinc-oxide（IGZO） film may be integrated with IGZO thin film transistors（TFTs） to accomplish system-on-panel applications. In this work, 1 × 1 m2 via hole structure IGZO based memory device was fabricated and the resistive switching（RS） behavior was investigated. By inserting a nitrogen doping layer IGZO:N by plasma treatment in Pt/IGZO/Ti N device, highly improved RS performance including lower forming voltage, remarkable uniformity, large memory window of 102, retention property of 104 s at 125?C, excellent pulse endurance of 107 cycles were achieved. The X-ray photoelectron spectroscopy analysis indicates that plasma doping method can evenly dope nitrogen and induce more non-lattice oxygen in the IGZO film. It is deduced that the N atoms of the inserting layer can influence the random formation of oxygen vacancy type conducting filaments, which results in more stable and uniform performance.
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