Determination of Shallow Impurity Concentration in Detector-grade Silicon by FT-IR Spectroscopy at 4.2K
来源期刊：Rare Metals1989年第4期
论文作者：Zhang Jichang Pohl lnstitute for Solid State Physics,Physics Dept.,Tongji University,Shanghai,China.Wu Jiangen Qu Fengyuan Laboratory for Semiconductor Physics,Physics Dept.,Fudan University,Shanghai,China.Ye Hongjuan Xiao Jincai Yu Zhiyi Lu Wei Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Academia Siniea.
文章页码：54 - 58
摘 要：<正> A Nicolet-200SXV FT-IR spectrometer combined with an exciting light set-up has been applied to determine the shallowimpurity concentration in detector--grade silicon.The detection sensitivity of boron concentration is high up to 7.8×10-12.Thecalibration curve of boron concentration in high-purity silicon has been obtained,from which the experimental value ofcalibration factor of boron concentration in silicon is demonstrated to be 1.15×1013cm-1.
摘要：<正> A Nicolet-200SXV FT-IR spectrometer combined with an exciting light set-up has been applied to determine the shallowimpurity concentration in detector--grade silicon.The detection sensitivity of boron concentration is high up to 7.8×10-12.Thecalibration curve of boron concentration in high-purity silicon has been obtained,from which the experimental value ofcalibration factor of boron concentration in silicon is demonstrated to be 1.15×1013cm-1.
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